Parameters influencing the maximum controllable current in gate commutated thyristors
نویسندگان
چکیده
The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the GCTs and can be used as an optimization tool for designing GCTs. In this paper we evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration.
منابع مشابه
Microcontroller Based Novel Dc-to-Ac Grid Connected Inverter Topology
The conventional line commutated ac-to-dc converters/ inverters have square-shaped line current which contains higher-order harmonics. Moreover, it requires a costly and bulky dc inductor or choke. The line current with the high harmonic contents generates EMI and therefore it causes more heating of the core of distribution or power transformers. Alternatively, PWM based inverters using MOSFET/...
متن کاملDevelopment of a Single-Phase PWM AC Controller
An AC chopper controller with symmetrical Pulse-Width Modulation (PWM) is proposed to achieve better performance for a single-phase induction motor compared to phase-angle control line-commutated voltage controllers and integral-cycle control of thyristors. Forced commutated device IGBT controlled by a microcontroller was used in the AC chopper which has the advantages of simplicity, ability to...
متن کاملNovel Design of n-bit Controllable Inverter by Quantum-dot Cellular Automata
Application of quantum-dot is a promising technology for implementing digital systems at nano-scale. Quantum-dot Cellular Automata (QCA) is a system with low power consumption and a potentially high density and regularity. Also, QCA supports the new devices with nanotechnology architecture. This technique works </...
متن کاملPerformance Investigation of Pentacene Based Organic Double Gate Field Effect Transistor and its Application as an Ultrasensitive Biosensor
In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...
متن کاملThyristors and Triacs Control Gate Trigger Circuits
The thyristor is a power semiconductor device with the control terminal called grid or gate (G). The device name comes from the similarity of operation with the gas triode: thiratron transistor. Because the thyristors are mainly used in the controlled rectifier structures, the technical literature calls them as SCR (Semiconductor Controlled Rectifiers) devices. After the series manufacture star...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- IET Circuits, Devices & Systems
دوره 8 شماره
صفحات -
تاریخ انتشار 2014